STP26NM60N 데이터 시트보기 (PDF) - STMicroelectronics

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STP26NM60N

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

STMicroelectronics 

STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.1

AM03321v1

ID = 250 µA

RDS(on)

(norm)

2.1

VGS = 10 V

AM03322v1

1.0

1.7

0.9

1.3

0.8

0.9

0.7

-50 -25 0 25 50 75 100 TJ(°C)

0.5

-50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

VSD

(V)

TJ=-50°C

AM03324v1

VDS

(norm)

1.10

ID=1mA

AM09028v1

1.2

1.08

1.06

1.0

TJ=25°C

1.04

1.02

0.8

1.00

TJ=150°C

0.98

0.6

0.96

0.4

0

5

10

15 ISD(A)

0.94

0.92

-50 -25 0 25 50 75 100 TJ(°C)

Doc ID 15642 Rev 5

9/23

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