STTH3006 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3006 Datasheet PDF : 8 Pages
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STTH3006
Characteristics
Figure 1. Conduction losses versus
average forward current
P(W)
55
50
45
40
35
30
25
20
15
10
5
0
0
δ = 0.1
δ = 0.05
δ = 0.2
IF(AV)(A)
5
10
15
20
δ = 0.5
δ=1
T
δ=tp/T
tp
25
30
35
Figure 2. Forward voltage drop versus
forward current
IFM(A)
200
180
160
Tj=150°C
(maximum values)
140
120
100
Tj=150°C
(typical values)
80
Tj=25°C
(maximum values)
60
40
20
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
30
VR=400V
Tj=125°C
25
20
15
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
IF=0.25 x IF(AV)
10
5
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 5.
trr(ns)
200
150
Reverse recovery time versus
dIF/dt (typical values)
IF=2 x IF(AV)
VR=400V
Tj=125°C
IF=IF(AV)
IF=0.5 x IF(AV)
100
50
dIF/dt(A/µs)
0
0
200
400
600
800
1000
Figure 6.
Qrr(µC)
3.0
VR=400V
Tj=125°C
2.5
Reverse recovery charges versus
dIF/dt (typical values)
2.0
IF=2 x IF(AV)
IF=IF(AV)
1.5
1.0
IF=0.5 x IF(AV)
0.5
0.0
0
dIF/dt(A/µs)
200
400
600
800
1000
3/8
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