STB8NM60D 데이터 시트보기 (PDF) - STMicroelectronics
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STB8NM60D
STMicroelectronics
STB8NM60D Datasheet PDF : 13 Pages
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Electrical characteristics
STB8NM60D - STP8NM60D
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
td(off)
tf
tc
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Cross-over Time
Test Condictions
VDD=300V, ID=2.5A,
RG=4.7Ω, VGS=10V
(see Figure 12)
VDD=480V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 12)
Min. Typ. Max. Unit
13
ns
10
ns
26
ns
8
ns
8
ns
8
ns
14
ns
Table 7. Source drain diode
Symbol
Parameter
Test Condictions
ISD
ISDM(1)
Source-drain Current
Source-drain Current
(pulsed)
VSD(2) Forward on Voltage
ISD=5A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=5A, di/dt = 100A/µs,
VDD=50 V, Tj=25°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=5A, di/dt = 100A/µs,
VDD=50 V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
5
A
20 A
1.5 V
107
ns
330
nC
6
A
178
ns
640
nC
7
A
4/13
Rev2
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