STP55NE06LFP 데이터 시트보기 (PDF) - STMicroelectronics
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STP55NE06LFP Datasheet PDF : 6 Pages
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STP55NE06LFP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
M ax
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O-2 20
T O-220F P
1.15
4. 28
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
55
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
60
Typ .
M a x.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symb ol
V GS(th )
RDS( o n )
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source O n VGS = 5 V ID = 27.5 A
Resistance
VGS = 10 V ID = 27.5 A
Min.
1
Typ .
1.7
0.022
0.019
M a x.
2.5
0. 028
0. 022
Unit
V
Ω
ID(o n) On Stat e Drain Curr ent VDS > ID(on) x RDS(on) max
55
A
VGS = 10 V
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Ca pac i ta nc e
Test Conditions
Min.
VDS > ID(on) x RDS(on)max ID =27.5 A 20
Typ .
30
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2800 3750 pF
375 500 pF
100 140 pF
2/6
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