STGP7NB60KD 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STGP7NB60KD Datasheet PDF : 14 Pages
| |||
STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
SWITCHING PARAMETERS
Symbol
Parameter
gfs
Forward Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
tscw
Short Circuit Withstand Time
td(on)
tr
(di/dt)on
Eon
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Test Conditions
VCE = 25V, Ic = 7 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480V, IC = 7 A,
VGE = 15V
Vce = 0.5 VBR(CES), VGE=15V,
Tc = 125°C , RG = 10 Ω
VCC = 480 V, IC = 7 A
RG = 10Ω, VGE = 15 V
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tc = 125°C
Vcc = 480 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
Tc = 25 °C
Vcc = 480 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
Tc = 125 °C
Min.
10
Typ.
TBD
495
77
13
32.7
5.9
18.3
15
6
980
94
85
20
75
100
85
235
150
50
110
150
220
314
Max.
45
Unit
S
pF
pF
pF
nC
nC
nC
µs
ns
ns
A/µs
µJ
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol
Parameter
Test Conditions
Vf
Forward On-Voltage
If = 3.5 A
If = 3.5 A, Tc = 125 °C
trr
Reverse Recovery Time
If = 7 A ,VR = 35 V,
Qrr
Reverse Recovery Charge
Tc=125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min. Typ. Max. Unit
1.4
1.9
V
1.15
V
50
ns
70
nC
2.7
A
3/14
Share Link: 