STGD3NB60S 데이터 시트보기 (PDF) - STMicroelectronics

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STGD3NB60S

N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT

STMicroelectronics 

STGP3NB60S - STGD3NB60S

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol

Parameter

Test Conditions

tc

tr(Voff)

td(off)

tf

Eoff(**)

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Vcc = 480 V, IC = 3 A,

RGE = 1KΩ , VGE = 15 V

tc

tr(Voff)

td(off)

tf

Eoff(**)

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Vcc = 480 V, IC = 3 A,

RGE = 1KΩ , VGE = 15 V,

Tj = 150°C

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Min. Typ. Max. Unit

1.8

µs

1.0

µs

3.4

µs

0.72

µs

1.15

mJ

2.8

µs

1.45

µs

3.6

µs

1.2

µs

1.8

mJ

3/10

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