STD3NK60Z-1(2018) 데이터 시트보기 (PDF) - STMicroelectronics

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STD3NK60Z-1
(Rev.:2018)

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

STMicroelectronics 

STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

2.4

-

A

9.6

VSD (2)

Forward on voltage

ISD = 2.4 A, VGS = 0 V

-

trr

Reverse recovery time

ISD = 2.4 A, di/dt = 100 A/µs

Qrr

IRRM

Reverse recovery charge VDD = 48 V, Tj = 150°C (see Figure 17. Test

-

circuit for inductive load switching and

Reverse recovery current diode recovery times)

1.6

V

306

ns

948

nC

6.2

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

Symbol

V(BR)GSO

Table 8. Gate-source Zener diode

Parameter

Gate-source breakdown

voltage

Test conditions

IGS = ±1 mA, ID = 0 A

Min. Typ. Max. Unit

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

DS2912 - Rev 6

page 4/34

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