STD2N50 데이터 시트보기 (PDF) - STMicroelectronics
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STD2N50 Datasheet PDF : 10 Pages
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STD2N50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 200 V ID = 1 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 2 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 400 V ID = 2 A VGS = 10 V
Min.
Typ.
35
85
28
18
5
8
Max.
50
120
25
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 2 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
25
15
45
Max.
35
25
65
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 2 A
di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
2
8
Unit
A
A
1.5
V
330
ns
2.5
µC
15
A
Safe Operating Area
Thermal Impedance
3/10
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