STD18N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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STD18N65M5

N-channel 650 V, 0.198 Ω typ., 15 A, MDmesh™ M5 Power MOSFETs in D²PAK and DPAK packages

STMicroelectronics 

STB18N65M5, STD18N65M5

Test circuits

3

Test circuits

Figure 16. Test circuit for resistive load switching times

VGS

pulse width

VD

RG

RL

2200

+ μF

3.3

μF

VDD

D.U.T.

AM01468v1

Figure 18. Test circuit for inductive load switching and

diode recovery times

Figure 17. Test circuit for gate charge behavior

VGS

pulse width

+

2200

μF

1 kΩ

12 V

47 kΩ

100 nF

VDD

1 kΩ

IG= CONST

2.7 kΩ

47 kΩ

100 Ω

D.U.T.

VG

AM01469v1

Figure 19. Unclamped inductive load test circuit

A

D

AA

G

D.U.T.

fast

diode

100 µH

S

B

25 Ω

BB

D

3.3

µF

1000

+ µF

VDD

G

D.U.T.

+ RG

S

_

AM01470v1

Figure 20. Unclamped inductive waveform

V(BR)DSS

VD

VDD

IDM

ID

VDD

AM01472v1

L

VD

2200

+ µF

3.3

µF

VDD

ID

Vi

pulse width

D.U.T.

AM01471v1

Figure 21. Switching time waveform

Id

90%Vds

Concept waveform for Inductive Load Turn-off

90%Id

Vgs

90%Vgs on

10%Vds

Vgs(I(t ))

Vds

Tdelay -off

Trise

Tfall

Tcross -over

10%Id

AM05540v2

DS9171 - Rev 2

page 8/23

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