STD18N65M5 데이터 시트보기 (PDF) - STMicroelectronics
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STD18N65M5
STMicroelectronics
STD18N65M5 Datasheet PDF : 23 Pages
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STB18N65M5, STD18N65M5
Electrical characteristics (curves)
Figure 13. Source-drain diode forward characteristics
VSD
(V)
TJ=-50°C
1.2
AM05461v1
1.0
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
00
2
4
6
8
10 ISD(A)
Figure 14. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
1.08
1.06
ID = 1mA
AM10399v1
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
Figure 15. Switching losses vs gate resistance
E (μJ )
160
140
VDD=400V
VG S =1 0 V
ID=9.5A
Eon
AM12485v1
120
100
80
60
Eoff
40
20
0
0
10
20
30
40
RG(Ω)
DS9171 - Rev 2
page 7/23
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