STD18N65M5(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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STD18N65M5
(Rev.:2012)

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STMicroelectronics 

STB18N65M5, STD18N65M5

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td (V)

tr (V)

tf(i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Test conditions

VDD = 400 V, ID = 9.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

Min.

-

Typ.

36

7

9

11

Max Unit

ns

ns

-

ns

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 15 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15 A, di/dt = 100 A/µs

-

VDD = 100 V (see Figure 22)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

-

(see Figure 22)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

15 A

60 A

1.5 V

290

ns

3.4

µC

23.5

A

352

ns

4

µC

24

A

Doc ID 023446 Rev 1

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