STP45NF3LL 데이터 시트보기 (PDF) - STMicroelectronics

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STP45NF3LL

N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II™ power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP45NF3LL - STB45NF3LL

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS = 0

30

V

VDS = Max rating

VDS=Max rating, TC=125°C

1 µA

10 µA

VGS = ±16V

±100 nA

VDS = VGS, ID = 250µA

VGS = 10V, ID = 22.5A

VGS = 4.5V, ID = 22.5A

1

V

0.014 0.018 Ω

0.016 0.020 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, ID=22.5A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 24V, ID = 45A,

VGS = 5V

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

20

S

800

pF

250

pF

60

pF

12.5 17 nC

4.6

nC

5.2

nC

Table 5. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off-delay time

Fall time

VDD = 15V, ID = 22.5A

RG = 4.7Ω VGS = 4.5V

(see Figure 15)

17

ns

100

ns

VDD = 15V, ID = 22.5A,

ns

20

RG = 4.7Ω, VGS = 4.5V

21

ns

(see Figure 15)

4/16

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