STA323WTR 데이터 시트보기 (PDF) - STMicroelectronics
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STA323WTR Datasheet PDF : 41 Pages
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STA323W
4.3 POWER ELECTRICAL CHARACTERISTCS (VL = 3.3V; Vcc = 30V; Tamb = 25°C unless otherwise
specified
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200 270 mΩ
Idss Power Pchannel/Nchannel
leakage Idss
Vcc=35V
50
µA
gN Power Pchannel RdsON Matching Id=1A
95
%
gP Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
10
20
ns
td ON Turn-on delay time
Resistive load
100
ns
td OFF Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
25
ns
tf
Fall time
Resistive load; as fig. 1
25
ns
VCC Supply voltage operating voltage
10
36
V
VL Low logical state voltage VL
VL = 3.3V
0.8
V
VH High logical state voltage VH
VL = 3.3V
1.7
V
IVCC- Supply Current from Vcc in
PWRDN PWRDN
PWRDN = 0
3
mA
IVCC-hiz Supply current from Vcc in Tri-
state
Vcc=30V; Tri-state
22
mA
IVCC Supply current from Vcc in
Input pulse width = 50% Duty;
80
mA
operation
Switching Frequency = 384Khz;
(both channel switching)
No LC filters;
Iout-sh Overcurrent protection threshold
(short circuit current limit)
4
6
A
VUV Undervoltage protection threshold
7
V
tpw-min Output minimum pulse width
No Load
70
150
ns
Po Output Power (refer to test circuit THD = 10%
RL = 8Ω; VS = 18V
20
W
Po Output Power (refer to test circuit THD = 1%
RL = 8Ω; VS = 18V
16
W
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