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SSF3616 데이터 시트보기 (PDF) - Silikron Semiconductor Co.,LTD.

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제조사
SSF3616
SILIKRON
Silikron Semiconductor Co.,LTD. 
SSF3616 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SSF3616
DESCRIPTION
The SSF3616 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
VDS = 30V,ID =9A
RDS(ON) < 30m@ VGS=4.5V
RDS(ON) < 18.5m@ VGS=10V
High Power and current handing capability
$●●
Lead free product is acquired
Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3616
SSF3616
SOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±25
9
40
2.5
-55 To 150
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
/W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Min Typ Max
30
1
Unit
V
μA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0

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