SP8K2 데이터 시트보기 (PDF) - ROHM Semiconductor
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SP8K2 Datasheet PDF : 4 Pages
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Transistors
Switching (30V, 6.0A)
SP8K2
SP8K2
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
0.4±0.1
1.27
0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
It is the same ratings for the Tr. 1 and Tr. 2.
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±6.0
±24
1.6
6.4
2
150
−55 to +150
Unit
V
V
A
A
∗1
A
A
∗1
W
∗2
°C
°C
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W ∗
1/3
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