SI9424DY 데이터 시트보기 (PDF) - Fairchild Semiconductor

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SI9424DY

Single P-Channel 2.5V Specified PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

-20

V

∆BVDSS

∆TJ

IDSS

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25°C

VDS = -16 V, VGS = 0 V

-24

mV/°C

-1

µA

IGSSF

Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V

100 nA

IGSSR

Gate-Body Leakage Current, Reverse VGS = -10 V, VDS = 0 V

-100 nA

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

∆VGS(th)

∆TJ

RDS(on)

Gate Threshold Voltage

Temperature Coefficient

Static Drain-Source

On-Resistance

ID(on)

On-State Drain Current

gFS

Forward Transconductance

VDS = VGS, ID = -250 µA

-0.4

ID = -250 µA, Referenced to 25°C

-0.8 -1.5 V

5

mV/°C

VGS = -4.5 V, ID = -8 A

0.019 0.024 Ω

VGS = -4.5 V, ID = -8 A ,TJ=125°C

0.026 0.039

VGS = -2.5 V, ID = -7 A

0.027 0.032

VGS = -4.5 V, VDS = -5.0 V

-50

A

VDS = -5 V, ID = -8 A

28

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = -10 V, VGS = 0 V,

f = 1.0 MHz

2260

pF

500

pF

205

pF

Switching Characteristics

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

(Note 2)

VDD = -10 V, ID = -1 A,

VGS = -4.5 V, RGEN = 6 Ω

VDS = -10 V, ID = -8 A,

VGS = -5 V,

8

16

ns

15 27 ns

98 135 ns

35 55 ns

23 33 nC

5.5

nC

4

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2)

-2.1 A

-0.75 -1.2 V

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.

a) 50° C/W when

mounted on a 0.5 in2

pad of 2 oz. copper.

b) 105° C/W when

mounted on a 0.02 in2

pad of 2 oz. copper.

c) 125° C/W when

mounted on a 0.003 in2

pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Si9424DY Rev.A

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