SH8M11 데이터 시트보기 (PDF) - ROHM Semiconductor

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SH8M11

4V Drive Nch + Pch MOSFET

ROHM Semiconductor 

SH8M11

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter

Symbol

Gate-source leakage

IGSS

Drain-source breakdown voltage V (BR)DSS

Zero gate voltage drain current

IDSS

Gate threshold voltage

VGS (th)

Static drain-source on-state

resistance

RDS

*

(on)

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

*Pulsed

l Yfs l *

Ciss

Coss

Crss

td(on)*

tr *

td(off)*

tf *

Qg *

Qgs *

Qgd *

Min.

-

30

1.0

-

-

-

2.5

-

-

-

-

-

-

-

-

-

-

　

Typ.

-

-

-

-

70

100

110

-

410

55

55

9

18

35

12

4.2

1.7

1.1

Max.

10

-

1

2.5

98

140

155

-

-

-

-

-

-

-

-

-

-

-

Unit

Conditions

A VGS=20V, VDS=0V

V ID=1mA, VGS=0V

A VDS=30V, VGS=0V

V VDS=10V, ID=1mA

ID=3.5A, VGS=10V

m ID=1.7A, VGS=4.5V

ID=1.7A, VGS=4.0V

S VDS=10V, ID=3.5A

pF VDS=10V

pF VGS=0V

pF f=1MHz

ns ID=1.7A, VDD 15V

ns VGS=10V

ns RL=8.8

ns RG=10

nC ID=3.5A, VDD 15V

nC VGS=5V

nC

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Symbol Min.

Typ.

Forward Voltage

VSD *

-

-

*Pulsed

Max.

1.2

Unit

Conditions

V Is=3.5A, VGS=0V

Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

3/10

2011.10 - Rev.A

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