SGP13N60UF 데이터 시트보기 (PDF) - Fairchild Semiconductor

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SGP13N60UF

Ultra-Fast IGBT

Fairchild Semiconductor 

SGP13N60UF

Ultra-Fast IGBT

IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A

• High input impedance

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

G

GCE

TO-220

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VCES

VGES

IC

ICM (1)

PD

TJ

Tstg

TL

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

@ TC = 25°C

@ TC = 100°C

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25°C

@ TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

E

SGP13N60UF

600

± 20

13

6.5

52

60

25

-55 to +150

-55 to +150

300

Typ.

--

--

Max.

2.0

62.5

Units

V

V

A

A

A

W

W

°C

°C

°C

Units

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

SGP13N60UF Rev. A1

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