SD1006 데이터 시트보기 (PDF) - Advanced Semiconductor

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SD1006

NPN SILICON HIGH FREQUENCY TRANSISTOR

Advanced Semiconductor 

SD1006

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:

The ASI SD1006 is a High Frequency

Transistor for General Purpose

Amplifier Applications.

MAXIMUM RATINGS

IC

400 mA

VCEO

30 V

VCBO

50 V

PDISS

3.5 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θJC

50 °C/W

PACKAGE STYLE TO-39

1 = EMITTER 2 = BASE

3 = COLLECTOR

NONE

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

BVCEO

IC = 5.0 mA

BVCBO

IC = 100 µA

BVEBO

IE = 100 µA

ICEO

VCE = 28 V

hFE

VCE = 15 V IC = 50 mA

ft

VCE = 15 V IC = 50 mA

Cob

VCB = 30 V

f = 100 KHz

Cib

VEB = 0.5 V

f = 100 KHz

NFNB

VCE = 10 V IC = 10 mA

f = 2000 MHz

NFBB

VCE = 15 V IC = 50 mA

f = 216 MHz

GVE

VCE = 15 V IC = 50 mA

f = 216 MHz

XMOD

VCE = 15 V

IC = 50 mA Pout = +45 dbmV

2NDO

VCE = 15 V

IC = 50 mA Pout = +45 dbmV

MINIMUM

30

50

5.0

30

1500

TYPICAL MAXIMUM

100

300

1800

2.5

3.5

8.0

10

2.7

7.0

8.0

7.2

6.8

-60

-57

-60

-50

UNITS

V

V

V

µA

---

MHz

pF

pF

dB

dB

dB

dB

dB

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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