HYB3165800ATL-50 데이터 시트보기 (PDF) - Siemens AG
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HYB3165800ATL-50 Datasheet PDF : 26 Pages
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HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
TA = 0 to 70 °C,VCC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60
Unit Note
min. max. min. max. min. max.
Output buffer turn-off delay
tOFF
–
10 –
13 –
15 ns 12
Output buffer turn-off delay from tOEZ
–
10 –
13 –
15 ns 12
OE
Data to OE low delay
CAS high to data delay
OE high to data delay
tDZO
tCDD
tODD
0
–
10 –
10 –
0
–
13 –
13 –
0–
15 –
15 –
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
tWCH
Write command pulse width
tWP
Write command setup time
tWCS
Write command to RAS lead time tRWL
Write command to CAS lead time tCWL
Data setup time
tDS
Data hold time
tDH
CAS delay time from Din
tDZC
5
–
5
–
0
–
10 –
10 –
0
–
5
–
0
–
7
–
7
–
0
–
13 –
13 –
0
–
7
–
0
–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
tR WC
RAS to WE delay time
tR WD
CAS to WE delay time
tC WD
Column address to WE delay time tAWD
OE command hold time
tOEH
105 –
55 –
25 –
35 –
5
–
126 –
68 –
31 –
43 –
7
–
150 –
80 –
35 –
50 –
10 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
tPC
30
Access time from CAS precharge tCPA
–
RAS pulse width
tRAS
40
CAS precharge to RAS Delay
tRHPC 25
– 35
25 –
200k 50
– 30
– 40
30 –
200k 60
– 35
– ns
35 ns 8
200k ns
– ns
Semiconductor Group
10
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