RT8072
Parameter
MOSFET
High Side MOSFET On-resistance
Low Side MOSFET On-resistance
Current Limit
Current Limit Threshold
Power Good
Power Good Range
Over Temperature Protection
Thermal Shutdown
Thermal Shutdown Hysteresis
Symbol
Test Conditions
VIN = 5V, BOOT − LX = 5V
VIN = 5V
VFB Rising (Good)
VFB Falling (Fault)
VFB Rising (Fault)
VFB Falling (Good)
Rising
Min Typ Max Unit
-- 50 --
mΩ
-- 35 --
mΩ
6
8
--
A
-- 94 --
-- 90 --
--
110
-- % VREF
-- 106 --
-- 165 --
°C
-- 20 --
°C
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
www.richtek.com
6
is a registered trademark of Richtek Technology Corporation.
DS8072-01 November 2012