RN4989 데이터 시트보기 (PDF) - Toshiba

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RN4989

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Toshiba 

RN4989

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

RN4989

Switching, Inverter Circuit, Interface Circuit and Driver Circuit

 AEC-Q101 Qualified (Note1)

 Including two devices in US6 (ultra super mini type with 6 leads)

 With built-in bias resistors

 Simplify circuit design

 Reduce a quantity of parts and manufacturing process and miniaturize

equipment.

Note1: For detail information, please contact to our sales.

Unit: mm

Equivalent Circuit and Bias Resister Values

Q1 Absolute Maximum Ratings (Ta = 25°C)

R1: 47 kΩ

R2: 22 kΩ

(Q1, Q2 Common)

JEDEC

―

JEITA

―

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

IC

50

V

50

V

15

V

100

mA

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

IC

−50

V

−50

V

−15

V

−100

mA

© 2019

1

Toshiba Electronic Devices & Storage Corporation

Start of commercial production

1992-10

2019-11-28

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