RN4988 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
RN4988 Datasheet PDF : 6 Pages
| |||
RN4988
TOSHIBA Transistor
Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN4988
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 22kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
7
100
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−7
−100
JEDEC
―
Unit
JEITA
―
V
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
V
V
mA
Unit
V
V
V
mA
Start of commercial production
1992-10
1
2014-03-01
Share Link: 