RN2207 데이터 시트보기 (PDF) - Toshiba
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RN2207 Datasheet PDF : 5 Pages
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RN2207~RN2209
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1207~RN1209
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2207
10
RN2208
22
RN2209
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2207
RN2208
RN2209
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
−50
−6
−7
−15
−100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1
2001-06-07
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