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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

RJK6012DPP-00-T2 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
RJK6012DPP-00-T2
Renesas
Renesas Electronics 
RJK6012DPP-00-T2 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RJK6012DPP
Main Characteristics
Maximum Safe Operation Area
100
10 μs
10
PW
1
= 100 μs
0.1
Operation in this
area is limited by
RDS(on)
0.01
Tc = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
10
1
0.1
Tc = 75°C
25°C
25°C
0.01
2
3
4
5
6
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
2.4
VGS = 10 V
2.0 Pulse Test
1.6
ID = 10 A
1.2
2.5 A
0.8
5A
0.4
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1581-0200 Rev.2.00
Jun 30, 2010
Preliminary
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
5.75 V
16
6V
7 V, 8 V, 10 V
12
5.5 V
8
5.25 V
4
5V
VGS = 4.75 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
1
10
100
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6

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