RJK5003DPD-00-Q2 데이터 시트보기 (PDF) - Renesas Electronics
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RJK5003DPD-00-Q2 Datasheet PDF : 7 Pages
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RJK5003DPD
Transfer Characteristics (Typical)
10
Tc = 25°C
VDS = 10 V
8 Pulse Test
6
4
2
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Switching Characteristics (Typical)
103
7
5
Tch = 25°C
VDD = 200 V
VGS = 10 V
3
RG = 25 Ω
2
Pulse Test
102
7
5
3
2
101100
td(off)
tf
td(on)
tr
23
5 7 101
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage Characteristics
(Typical)
10
VGS = 0 V
Pulse Test
8 Ta = 25°C
6
4
2
0
0 0.4 0.8 1.2 1.6 2
Source to Drain Voltage VSD (V)
Capacitance vs.
Drain to Source Voltage (Typical)
103
Ciss
102
101
Tch = 25°C
f = 1 MHz
100 VGS = 0 V
100
101
Coss
Crss
102
103
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Gate Charge (Typical)
16
Tch = 25°C
ID = 5 A
VDS = 100 V
12
200 V
8
400 V
4
0
0 4 8 12 16 20 24
Gate Charge Qg (nC)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0 V
ID = 1 mA
1.2
1.0
0.8
0.6
0.4
–75 –25 25
75 125 175
Channel Temperature Tch (°C)
Rev.2.00, Mar 14, 2006, page 4 of 6
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