BFT36A(2000) 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc

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BFT36A
(Rev.:2000)

PNP SILICON TRANSISTOR

Semelab - > TT Electronics plc  

BFT36A

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Static Value of Common

h21E

Emitter Forward Current

Transfer Ratio

fT

Transistion Frequency

VCE = 10V

VCE = 10V

VCE = 10V

VCE = 5V

f = 20MHz

IC = 0.15

50

IC = 2A

15

IC = 1mA

20

IC = 100mA

50

ICBO

Collector Base

Cut- Off Current.

VCB = 80V

IE = 0

t = 150°C

IEBO

Emitter–Base Cut-off Current

h21e

VCE(sat)*

VBE(sat)*

C22b

Small Signal Common Emitter VEB = 4V

Forward Current Transfer Ratio VCE = 5V

Collector – Emitter

f = 1KHz

Saturation Voltage*

Base – Emitter

Saturation Voltage*

Common – Base

Output Capacitance

IC = 150mA

IC = 1A

IC = 150mA

VCB = 10V

f = 1MHz

25

IC = 10mA

IB = 15mA

IB = 0.1A

IB = 15mA

IE = 0

Typ.

Max. Unit

250

—

MHz

100 nA

100

mA

100 nA

—

0.3

V

0.6

0.95

V

1.3

80

pF

*Pulse Conditions: Pulse Length = 300ms duty cycle = 1.5%

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Prelim.3/00

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