FS0203DN00RB 데이터 시트보기 (PDF) - Formosa Technology
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FS0203DN00RB Datasheet PDF : 4 Pages
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FS02...N
SOT223
(Plastic)
SURFACE MOUNT SCR
On-State Current
1.25 Amp
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
IT(RMS)
IT(AV)
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
PARAMETER
On-state Current*
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
* with 5 cm2 copper (e= 35µm) surface under tab.
CONDITIONS
Half Cycle, Θ = 180 º, Ttab = 95 ºC
Half Cycle, Θ = 180 º, Ttab = 95 ºC
Half Cycle, 60 Hz, Tj = 25 ºC
Half Cycle, 50 Hz, Tj = 25 ºC
tp = 10ms, Half Cycle
IGR = 10 µA, Tj = 25 ºC
20 µs max.
20 µs max.
20 ms max.
10s max.
Min. Max. Unit
1.25
A
0.8
A
25
A
22.5
A
2.5
A2s
8
V
1.2
A
3
W
0.2 W
-40 +125 ºC
-40 +150 ºC
260 ºC
SYMBOL
PARAMETER
VDRM
VRRM
Repetitive Peak Off State
Voltage
CONDITIONS
RGK = 1 KΩ
VOLTAGE
Unit
B D MN
200 400 600 800 V
Jun - 02
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