PUMX2,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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PUMX2,115 Datasheet PDF : 8 Pages
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NXP Semiconductors
PUMX2
NPN/NPN general-purpose double transistors
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PUMX2
SC-88
plastic surface mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
PUMX2
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
Z1*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
Per device
Ptot
Tstg
Tj
Tamb
total power dissipation
storage temperature
junction temperature
ambient temperature
Tamb ≤ 25 °C
[1] -
−65
-
−65
Max Unit
60
V
50
V
7
V
150
mA
200
mA
100
mA
180
mW
300
mW
+150 °C
150
°C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PUMX2_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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