PSMN130-200D 데이터 시트보기 (PDF) - Philips Electronics

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PSMN130-200D

N-channel TrenchMOS(TM) transistor

Philips Electronics 

Philips Semiconductors

Product specification

N-channel TrenchMOS(TM) transistor

PSMN130-200D

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

(body diode)

ISM

Pulsed source current (body

diode)

VSD

Diode forward voltage

IF = 25 A; VGS = 0 V

trr

Reverse recovery time

IF = 20 A; -dIF/dt = 100 A/µs;

Qrr

Reverse recovery charge VGS = -10 V; VR = 25 V

MIN. TYP. MAX. UNIT

-

- 20 A

-

- 80 A

- 0.95 1.2 V

- 124 - ns

- 0.74 - µC

August 1999

4

Rev 1.000

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