PSB162/16 데이터 시트보기 (PDF) - Powersem GmbH
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PSB162/16 Datasheet PDF : 2 Pages
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PSB 162
200
[A]
150
100
50
IF
Tvj = 150°C
Tvj = 25°C
0
0.5 1 1.5 2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1800
1600
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
5
10
A2s
TVJ=45°C
104
TVJ=150°C
103
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
400
[W] PSB 162
350
300
250
200
150
100
50
PVTOT
0
25
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
75
125 0
[A]
70
TC
75
0.12 0.05 = RTHCA [K/W] 80
0.18
85
90
95
0.31
100
105
110
115
0.56
120
125
130
1.3
135
140
50
Tamb
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1
K/W
Z thJK
0.8
Z thJC
0.6
150
[A]
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
I dAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
0.4
0.2
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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