PMBFJ113 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBFJ113 Datasheet PDF : 9 Pages
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NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
PMBFJ111
-
plastic surface mounted package; 3 leads
PMBFJ112
PMBFJ113
4. Marking
Table 3. Marking
Type number
PMBFJ111
PMBFJ112
PMBFJ113
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
Marking code[1]
41*
42*
47*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage (DC)
-
VGSO
gate-source voltage
-
VGDO
gate-drain voltage
-
IG
forward gate current (DC)
-
Ptot
total power dissipation
Tamb = 25 C
[1] -
Tstg
storage temperature
65
Tj
junction temperature
-
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
6. Thermal characteristics
Table 5. Thermal characteristics
Tj = P (Rth(j-t) + Rth(t-s) + Rth(s-a)) + Tamb.
Symbol Parameter
Rth(j-a)
thermal resistance from junction to ambient
thermal resistance from junction to ambient
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
[2] Mounted on printed circuit board.
Conditions
Version
SOT23
Max Unit
40
V
40
V
40
V
50
mA
300
mW
+150 C
150
C
Typ
[1] 430
[2] 500
Unit
K/W
K/W
PMBFJ111_112_113
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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