Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-h) thermal resistance from junction to heatsink
Conditions
Figure 4
5.1 Transient thermal impedance
Min Typ Max Unit
-
-
4.5 K/W
10
Zth(j-h)
(K/W)
δ = 0.5
1 0.2
10-1
0.1
0.05
0.02
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
03aq70
P
δ=
tp
T
tp
t
T
1
10
102
tp (s)
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
9397 750 13285
Product data
Rev. 01 — 14 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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