PHB82NQ03LT 데이터 시트보기 (PDF) - Philips Electronics
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PHB82NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
3.2
VGS(th)
(V)
2.4
1.6
0.8
max
typ
min
03ai29
10-1
ID
(A)
10-2
10-3
10-4
10-5
03ai28
min
typ
max
0
-60
0
60
120
180
Tj (ºC)
10-6
0
0.8
1.6
2.4
3.2
VGS(V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
03ai60
C
(pF)
103
Ciss
Coss
102
10-1
1
Crss
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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