PD250HB120 데이터 시트보기 (PDF) - SanRex Corporation
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PD250HB120 Datasheet PDF : 2 Pages
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THYRISTOR MODULE
PK(PD,PE)250HB
Power Thyristor/Diode Module PK250HB series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 1,600V are available.
Isolated mounting base
● IT（AV）250A, IT（RMS）310A, ITSM 5500A
● di/dt 200 A/μs
● dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
3
A1K2
2
（K2）
K2
G2
1
（A2）K1 G1
3
A1K2
2
（K2）
K2
1
（A2）K1 G1
3
A1K2
2
（K2）
K2
G2
1
（A2）K1
PK
PD
PE
UL;E76102（M）
92
12 26
26
7
4-φ6（M5）
18 2
M8×14
R8.0
♯110TAB
（2.8.0.5T）
80±0.3
Unit：A
■Maximum Ratings
Symbol
Item
VRRM
VRSM
VDRM
＊Repetitive Peak Reverse Voltage
＊Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Ratings
PK250HB120 PD250HB120
PE250HB120
PK250HB160 PD250HB160 Unit
PE250HB160
1200
1600
V
1300
1700
V
1200
1600
V
Symbol
Item
Conditions
IT（AV） ＊Average On-State Current
Single phase, half wave, 180°conduction, Tc：72℃
IT（RMS） ＊R.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc：72℃
ITSM ＊Surge On-State Current
I2t ＊I2t
1／2cycle, 50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
PGM Peak Gate Power Dissipation
PG（AV） Average Gate Power Dissipation
IFGM Peak Gate Current
VFGM Peak Gate Voltage（Forward）
VRGM Peak Gate Voltage（Reverse）
di/dt Critical Rate of Rise of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs
VISO ＊Isolation Breakdown Voltage （R.M.S.） A.C. 1 minute
Tj ＊Operating Junction Temperature
Tstg ＊Storage Temperature
Mounting Mounting（M5） Recommended Value 1.5-2.5（15-25）
Torque
Terminal（M8） Recommended Value 8.8-10 （90-105）
Mass
Typical Value
Ratings
250
390
5000/5500
125000
10
3
3
10
5
200
2500
−40 to ＋125
−40 to ＋125
2.7（28）
11（115）
510
Unit
A
A
A
A2S
W
W
A
V
V
A/μs
V
℃
℃
N･ｍ
（㎏f･B）
g
■Electrical Characteristics
Symbol
Item
IDRM Repetitive Peak Off-State Current, max.
IRRM ＊Repetitive Peak Reverse Current, max.
VTM ＊Peak On-State Voltage, max.
IGT/VGT Gate Trigger Current/Voltage, max.
VGD Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv/dt Critical Rate of Rise of Off-State Voltage, min.
IH
Holding Current, typ.
IL
Lutching Current, typ.
Rth（j-c）＊Thermal Impedance, max.
＊mark：Thyristor and Diode part. No mark：Thyristor part
Conditions
at VDRM, Single phase, half wave, Tj＝125℃
at VDRM, Single phase, half wave, Tj＝125℃
On-State Current 750A, Tj＝125℃ Inst. measurement
Tj＝25℃，IT＝1A，VD＝6V
Tj＝125℃，VD＝1／2VDRM
IT＝250A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs
Tj＝125℃，VD＝2／3VDRM，Exponential wave.
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
50
50
1.60
100/3
0.25
10
500
50
100
0.14
Unit
mA
mA
V
mA/V
V
μs
V/μs
mA
mA
℃/W
33
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