NTE2940 데이터 시트보기 (PDF) - NTE Electronics

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NTE2940

MOSFET N−Channel, Enhancement Mode High Speed Switch

NTE Electronics 

NTE2940

MOSFET

N−Channel, Enhancement Mode

High Speed Switch

Features:

D Low Static Drain−Source ON Resistance

D Improved Inductive Ruggedness

D Fast Switching Times

D Low Input Capacitance

D Extended Safe Operating Area

D TO220 Type Isolated Package

Absolute Maximum Ratings:

Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Drain−Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

Drain Current, ID

Continuous

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A

Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A

Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.5mJ

Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C

Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C

Thermal Resistance:

Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W

Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W

Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W

Note 1. TJ = +25° to +175°C.

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 3. L = 100µH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.

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