NLX2G06MUTCG 데이터 시트보기 (PDF) - ON Semiconductor
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NLX2G06MUTCG Datasheet PDF : 8 Pages
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NLX2G06
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter
Conditions
TA = −555C to
VCC
TA = 255C
TA = +855C
+1255C
(V)
Min Typ Max
Min
Max
Min
Max Unit
VIH
Low−Level
Input
Voltage
1.65−1.95
2.3 to 5.5
0.75 x
VCC
0.70 x
VCC
0.75 x
0.75 x
V
VCC
VCC
0.70 x
VCC
0.70 x
VCC
VIL
Low−Level
Input
Voltage
1.65−1.95
2.3 − 5.5
0.25 x
VCC
0.30 x
VCC
0.25 x
VCC
0.30 x
VCC
0.25 x V
VCC
0.30 x
VCC
VOL
Low−Level VIN = VIH or VIL 1.65 − 5.5
Output
IOL = 100 mA
Voltage
VIN = VIH or VIL
IOH = 4 mA
1.65
IOH = 8 mA
2.3
IOH = 12 mA
2.7
IOH = 16 mA
3.0
IOH = 24 mA
3.0
IOH = 32 mA
4.5
0.1
0.08 0.24
0.2
0.3
0.22 0.4
0.28 0.4
0.38 0.55
0.42 0.55
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.1
V
0.24
0.3
0.4
0.4
0.55
0.55
ILKG
Z−State
VIN = VIL,
5.5
Output
VOUT = VCC or
Leakage
GND
Current
±5.0
±10
±10
mA
IIN
Input
0 v VIN v 5.5 V 0 to 5.5
Leakage
Current
±0.1
±1.0
±1.0 mA
IOFF
Power−Off VIN or VOUT =
0
Output
5.5 V
Leakage
Current
1.0
10
10
mA
ICC
Quiescent 0 v VIN v VCC
5.5
Supply
Current
1.0
10
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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