NJU7712/13
! NJU7713
! ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Input Voltage
VDD
+10
V
Output Voltage
Output Current
Power Dissipation
VOUT
IOUT
PD
VSS-0.3 ∼ +10
V
50
mA
200(MTP5)
250(SC88A(*note 1))
mW
Operating Temperature
Topr
-40 ∼ +85
°C
Storage Temperature
Tstg
-40 ∼ +125
°C
(*note 1): On board, 50mm×50mm×1.6mm glass epoxy baseplate.
! ELECTRICAL CHARACTERISTICS
(1ch: Over Voltage Detect, Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Detection Voltage
Hysterisis Voltage
Quiescent Current
Output Current
Detection Voltage
Temperature
Coefficient
Operating Voltage
(*note 4)
VDET1
VHYS1
ISS1
IOUT1
VDD1=VDET1+1V
Nch, VDS1=0.5V
Pch, VDS1=0.5V
VDET1=1.5V ∼ 1.7V Version
VDET1=1.8V ∼ 6.0V Version
VDD1=4.8V(≤4.3V Version)
VDD1=7.0V
VDD1=1.4V
VDD1=2.4V(≥2.7V Version)
∆VDET1/∆Ta Ta=0 ∼ +85°C
-1.0% − +1.0% V
VDET VDET VDET
x0.03 x0.05 x0.08
V
−
0.5 1.0 µA
−
0.8 1.6 µA
6
13
−
mA
8
18
−
mA
0.1 0.4
−
mA
0.6 1.6
−
mA
− ±100 − ppm/°C
VDD1
RL1=100kΩ
1.2
−
9
V
(*note 4): The minimum Operating Voltage(VOPL) indicates the same value of the output voltage(VOUT) on
condition that VOUT becomes 90% or less of the input voltage(VDD).
(2ch: Low Voltage detect, Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Detection Voltage
Hysterisis Voltage
Quiescent Current
Output Current
Detection Voltage
Temperature
Coefficient
Operating Voltage
(*note 5)
VDET2
VHYS2
ISS2
IOUT2
-1.0% − +1.0% V
VDET VDET VDET
x0.03 x0.05 x0.08
V
VDD2=VDET2+1V
VDET2=1.5V ∼ 1.7V Version
VDET2=1.8V ∼ 6.0V Version
−
−
0.5 1.0 µA
0.8 1.6 µA
Nch, VDS2=0.5V
VDD2=4.8V(≤4.3V Version)
VDD2=7.0V
0.75 2.0
4.5 7.0
−
−
mA
mA
VDD2=1.4V
2.0 3.5
−
mA
Pch, VDS2=0.5V
VDD2=2.4V
Version)
(4.0V∼5.6V 2.5 4.0
−
mA
VDD2=8.4V (≥5.7V Version) 3.0 5.0
−
mA
∆VDET2/∆Ta Ta=0 ∼ +85°C
− ±100 − ppm/°C
VDD2
RL2=100kΩ
0.8
−
9
V
(*note 5): The minimum Operating Voltage(VOPL) indicates the same value of the output voltage(VOUT) on
condition that VOUT becomes 10% or less of the input voltage(VDD).
-6-
Ver.2004-01-16