NJL3281D 데이터 시트보기 (PDF) - ON Semiconductor

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NJL3281D

Complementary ThermalTrak Transistors

ON Semiconductor 

NJL3281D (NPN) NJL1302D (PNP)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage − 1.5 V

Collector Current

− Continuous

− Peak (Note 1)

VCEO

VCBO

VEBO

VCEX

IC

260

Vdc

260

Vdc

5

Vdc

260

Vdc

15

Adc

25

Base Current − Continuous

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction Temperature Range

DC Blocking Voltage

Average Rectified Forward Current

THERMAL CHARACTERISTICS

IB

PD

TJ, Tstg

VR

IF(AV)

1.5

200

1.43

− 65 to +150

200

1.0

Adc

W

W/°C

°C

V

A

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.625

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES

ESD Protection

Flammability Rating

Characteristic

Human Body Model

Machine Model

Value

>8000 V

> 400 V

UL 94 V−0 @ 0.125 in

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