NCV8614BMNR2G(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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NCV8614BMNR2G
(Rev.:2009)
(Rev.:2009)
ON Semiconductor
NCV8614BMNR2G Datasheet PDF : 25 Pages
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NCV8614B
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN−H
= VIN−B w ASO_RAIL, VPP = 3.3 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, IGNIN = 0 V, ISYS = 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range −40°C v TJ v 150°C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min Typ Max Unit
VBATT MONITOR
VBATT_MON Minimum Operating Voltage
Threshold where BO_DET and HV_DET
signals become valid
1.0
2.0
2.5
V
VBATT_MON Hysteresis
0.25
V
HV_DET Voltage High
10 kW Pulldown to GND
VOUT2 −
V
VBATT_MON Tied to ASO_RAIL
0.5
HV_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
0.4
V
HV_DET Threshold
VBATT_MON Rising
16.2
17.8
V
HV_DET Hysteresis
VBATT_MON Falling
0.2 0.35 0.5
V
BO_DET Voltage High
10 kW Pulldown to GND
VOUT2 −
V
VBATT_MON Tied to ASO_RAIL
0.5
BO_DET Voltage Low
10 kW Pullup to 3.3 V
VBATT_MON Tied to ASO_RAIL
0.4
V
BO_DET Threshold
VBATT_MON Falling
7
7.5
8
V
BO_DET Hysteresis
4. iq is equal to IVIN−B + IVIN−H − ISYS
5. ISHDN is equal to IVIN−B + IVIN−H
6. ISYS is equal to IOUT1 + IOUT2 + IOUT3
VBATT_MON Rising
0.2 0.35 0.5
V
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