NCV8570BSN18T1G(2011) 데이터 시트보기 (PDF) - ON Semiconductor

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NCV8570BSN18T1G
(Rev.:2011)

200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator

ON Semiconductor 

NCV8570B

TYPICAL CHARACTERISTICS

4.0

VIN = 3.5 V

3.5

3.0

VIN = 2.5 V

2.5

1.810

1.805

1.800

1.795

1.790

1.785

COUT = 1 mF, VIN = 2.5 V, Cnoise = 100 nF,

IOUT = 30 mA, dVIN/dt = 1 V / 1 ms

1.780

0 20 40 60 80 100 120 140 160 180 200

t, TIME (ms)

Figure 30. Line Transient Response,

VOUT = 1.8 V, COUT = 1 mF, IOUT = 30 mA

4.0

VIN = 3.5 V

3.5

3.0

VIN = 2.5 V 2.5

1.810

1.805

1.800

1.795

1.790

1.785

1.780

COUT = 1 mF, VIN = 2.5 V,

Cnoise = 100 nF, IOUT = 200 mA,

dVIN/dt = 1 V / 1 ms

0 20 40 60 80 100 120 140 160 180 200

t, TIME (ms)

Figure 31. Line Transient Response,

VOUT = 1.8 V, COUT = 1 mF, IOUT = 200 mA

5.0

VIN = 4.5 V

4.5

4.0

VIN = 3.5 V

3.5

3.010

3.005

3.000

2.995

2.990

2.985

2.980

COUT = 1 mF, VIN = 3.5 V,

Cnoise = 100 nF, IOUT = 30 mA,

dVIN/dt = 1 V / 1 ms

0 20 40 60 80 100 120 140 160 180 200

t, TIME (ms)

Figure 32. Line Transient Response,

VOUT = 3.0 V, COUT = 1 mF, IOUT = 30 mA

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