HYB39S64160AT 데이터 시트보기 (PDF) - Infineon Technologies

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HYB39S64160AT

64Mbit Synchronous DRAM

Infineon Technologies 

Parameter

Refresh Cycle

Refresh Period

(4096 cycles)

Self Refresh Exit Time

Read Cycle

Data Out Hold Time

Data Out to Low Impedance Time

Data Out to High Impedance Time

DQM Data Out Disable Latency

Write Cycle

Data Input to Precharge

(write recovery)

DQM Write Mask Latency

HYB39S64400/800/160AT(L)

64MBit Synchronous DRAM

Symbol

Limit Values

Unit

-8

-8B

-10

min. max. min. max. min. max.

tREF

tSREX

– 64 – 64 – 64 ms

10 – 10 – 10 – ns

tOH

3 – 3 – 3 – ns 2

tLZ

0 – 0 – 0 – ns

tHZ

3 8 3 10 3 10 ns

tDQZ

– 2 – 2 – 2 CLK

tWR

2 – 2 – 2 – CLK

tDQW

0 – 0 – 0 – CLK

Semiconductor Group

17

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