MSS50-1200 데이터 시트보기 (PDF) - STMicroelectronics
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MSS50-1200 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
MSS40, MSS50
Table 3. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
MSS40 MSS50
VDRM/VRRM Repetitive peak off-state voltage
1200
800
1200
V
IT(RMS) RMS on-state current
Tc = 80° C
55
A
Tc = 85° C
70
ITSM
I2t
Non repetitive surge peak on-state
current
I2t Value for fusing
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
Tj = 25° C
Tj = 25° C
420
630
400
600
A
800
1800
A2S
dI/dt
) IGM
t(s PG(AV)
c Tstg
u Tj
rod VRGM
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
F = 120 Hz
tp = 20 µs
Tj = 125° C
Tj = 125° C
Tj = 125° C
50
4
1
- 40 to + 150
- 40 to + 125
5
P Table 4.
olete Symbol
Electrical characteristics (Tj = 25° C, unless otherwise specified)
Test Conditions
Value
MSS40 MSS50
bs IGT
- O VGT
t(s) VGD
IH
uc IL
d dV/dt
Pro VTM
te Vt0
ole Rd
sIDRM
ObIRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 80 A tp = 380 µs
ITM = 100 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
5
50
1.3
0.2
80
120
1000
1.7
1.7
0.85
11
7
20
10
A/µs
A
W
°C
V
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 5. Thermal reistances
Symbol
Rth(j-c) Junction to case (AC)
Parameter
MSS40
MSS50
Value
0.6
0.45
Unit
° C/W
2/7
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