1Semiconductor
FEDD51V17400F-04
MSM51V17400F
AC CHARACTERISTICS (2/2)
Parameter
(VCC = 3.3V ± 0.3V, Ta = 0 to 70°C) Note1,2,3,11,12
MSM51V17400 MSM51V17400 MSM51V17400
Symbol
F-50
F-60
F-70
Unit Note
Min. Max. Min. Max. Min. Max.
Row Address Hold Time
Column Address Set-up Time
tRAH
7
tASC
0
10
10
ns
0
0
ns
Column Address Hold Time
tCAH
7
10
15
ns
Column Address to RAS Lead Time tRAL 25
30
35
ns
Read Command Set-up Time
tRCS
0
0
0
ns
Read Command Hold Time
Read Command Hold Time
referenced to RAS
tRCH
0
0
0
ns 8
tRRH
0
0
0
ns 8
Write Command Set-up Time
Write Command Hold Time
Write Command Pulse Width
OE Command Hold Time
tWCS
0
0
0
ns 9
tWCH
7
10
15
ns
tWP
7
10
10
ns
tOEH
13
15
20
ns
Write Command to RAS Lead Time tRWL 13
15
20
ns
Write Command to CAS Lead Time tCWL 13
15
20
ns
Data-in Set-up Time
tDS
0
0
0
ns 10
Data-in Hold Time
tDH
7
10
15
ns 10
OE to Data-in Delay Time
tOED
13
15
20
ns
CAS to WE Delay Time
tCWD 36
40
50
ns 9
Column Address to WE Delay Time tAWD 48
55
65
ns 9
RAS to WE Delay Time
tRWD 73
85
100
ns 9
CAS Precharge WE Delay Time
tCPWD 53
60
70
ns 9
CAS Active Delay Time from RAS
Precharge
tRPC
5
5
5
ns
RAS to CAS Set-up Time
(CAS before RAS)
RAS to CAS Hold Time
(CAS before RAS)
tCSR
10
10
10
ns
tCHR
10
10
10
ns
WE to RAS Precharge Time
(CAS before RAS)
WE Hold Time from RAS
(CAS before RAS)
tWRP 10
10
10
ns
tWRH 10
10
10
ns
RAS to WE Set-up Time (Test Mode) tWTS 10
10
10
ns
RAS to WE Hold Time (Test Mode) tWTH 10
10
10
ns
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