HIP2060 데이터 시트보기 (PDF) - Intersil
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HIP2060 Datasheet PDF : 8 Pages
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HIP2060
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-On Delay Time (Note 5)
Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Fall Time (Note 5)
Total Gate Charge (Note 5)
Gate-Source Charge (Note 5)
Gate-Drain Charge (Note 5)
Short-Circuit Input Capacitance,
Common Source
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
VDD = 30V, RL = 3Ω
ID = 10A, VGS = 10V, RG = 50Ω
See Figure 14
VDS = 50V, VGS = 10V, ID = 10A
See Figures 16 and 17
VDS = 25V, VGS = 0V, f = 1MHz
Short-Circuit Output Capacitance,
Common Source for Upper FET
COSS (U)
Short Circuit Output Capacitance
Common Source for Lower FET
COSS(L)
Short-Circuit Reverse Transfer
Capacitance, Common Source
CRSS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-TO-DRAIN DIODE SPECIFICATIONS (Across Z1 and Z2)
Forward Voltage (Note 4)
VSD
ISD = 10A, VGS = 0V
Reverse Recovery Time (Across Z1)
trr(S1-D1) ISD = 10A, dISD/dt = 100A/µs
Reverse Recovery Time (Across Z2)
trr(S2-D2) ISD = 10A, dISD/dt = 100A/µs
SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D (Across D1)
Forward Voltage (Note 4)
VSD
Reverse Recovery Time
trr
DEVICE MATCHING
Drain-Source On Resistance Match
rDS(ON)M
NOTES:
4. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
5. Independent of operating temperature.
ISD = 10A, VGS = 0V
ISD = 10A, dISD/dt = 100A/µs
VGS = 10V, ID = 10A, TC = 25oC
MIN TYP MAX UNITS
-
4
-
ns
-
5
-
ns
-
12
-
ns
-
6
-
ns
-
10.5 12.0
nC
-
1.4
2.0
nC
-
4.9
5.5
nC
-
230
-
pF
-
150
-
pF
-
225
-
pF
-
40
-
pF
-
-
2.7
oC/W
-
-
60
oC/W
MIN
TYP MAX UNITS
-
1.05 1.25
V
-
50
-
ns
-
75
-
ns
-
8.5
9.5
V
-
200
-
ns
-
90
-
%
3
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