MMBT5088L-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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MMBT5088L-AE3-R

NPN GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

MMBT5088/MMBT5089

 TYPICAL CHARACTERISTICS

1200

1000

Typical Pulsed Current Gain

vs Collector Current

125 C

VCE=5.0V

800

600

25 C

400

-40 C

200

0

0.01 0.03 0.1 0.3 1 3 10

Collector Current, IC (mA)

30 100

NPN SILICON TRANSISTOR

Collector-Emitter Saturation

0.3

Voltage vs. Collector Current

0.25

β=10

0.2

0.15

125 C

0.1

25 C

0.05

-40 C

0.1

1

10

100

Collector Current, IC (mA)

Collector-Cutoff Current

10

vs Ambient Temperature

VCB=45V

1

-0.1

25

50 75 100 125 150

Ambient Temperature, TA (℃)

UNISONIC TECHNOLOGIES CO., Ltd

www.unisonic.com.tw

Input and Output Capacitance vs

5

Reverse Bias Voltage

f=1.0MHz

4

3

Cte

2

1

Cob

0

0

4

8

12 16

20

Reverse Bias Voltage (V)

4 of 7

QW-R206-033.C

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