MMBT5088L-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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MMBT5088L-AE3-R

NPN GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

MMBT5088/MMBT5089

NPN SILICON TRANSISTOR

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage MMBT5088

(Note)

MMBT5089

Collector-Base Breakdown Voltage

MMBT5088

MMBT5089

Collector Cut-Off Current

MMBT5088

MMBT5089

Emitter Cutoff Current

ON CHARACTERISTICS

MMBT5088

MMBT5089

DC Current Gain

MMBT5088

MMBT5089

MMBT5088

MMBT5089

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

SYMBOL

BVCEO

BVCBO

ICBO

IEBO

hFE

VCE(SAT)

VBE(ON)

fT

Collector-Base Capacitance

CCB

Emitter-Base Capacitance

CEB

Small-Signal Current Gain

MMBT5088

MMBT5089

hFE

Noise Figure

MMBT5088

NF

MMBT5089

Note: Pulse Test: Pulse Width300s, Duty Cycle2.0%.

TEST CONDITIONS MIN TYP MAX UNIT

IC=1.0mA, IB=0

30

25

IC=100A, IE=0

35

30

VCB=20V, IE=0

VCB=15V, IE=0

VEB=3.0V, IC=0

VEB=4.5V, IC=0

VCE=5.0V, IC=100A

300

400

VCE=5.0V, IC=1.0mA

350

450

VCE=5.0V,

300

IC=10mA(Note)

400

IC=10mA, IB=1.0mA

IC=10mA, VCE=5.0V

VCE=5.0mA,

IC=500A, f=20MHz

50

VCB=5.0V, IE=0,

f=100kHz

VEB=0.5V, IC=0,

f=100kHz

VCE=5.0V, IC=1.0mA, 350

f=1.0kHz

450

VCE=5.0V, IC=100A,

RS=10k,

f=10kHz ~ 15.7kHz

V

V

V

V

50 nA

50 nA

50 nA

100 nA

900

1200

0.5 V

0.8 V

MHz

4 pF

10 pF

1400

1800

3.0 dB

2.0 dB

UNISONIC TECHNOLOGIES CO., Ltd

www.unisonic.com.tw

3 of 7

QW-R206-033.C

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