MMBT5088L-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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MMBT5088L-AE3-R

NPN GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

MMBT5088/MMBT5089

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter voltage

MMBT5088

MMBT5089

VCEO

30

25

V

Collector-Base voltage

MMBT5088

MMBT5089

VCBO

35

30

V

Emitter-base voltage

VEBO

4.5

V

Collector current-continuous

IC

100

mA

Total Device Dissipation

Linear Derating Factor above TA= 25°C

PD

350

mW

2.8

mW/°C

Junction Temperature

TJ

+125

°C

Operating Temperature

TOPR

-40 ~ +150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These ratings are based on a maximum junction temperature of 150 degrees C.

3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

 THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Junction to Ambient

SYMBOL

JA

RATINGS

357

UNIT

°C/W

UNISONIC TECHNOLOGIES CO., Ltd

www.unisonic.com.tw

2 of 7

QW-R206-033.C

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