MMBD2835LT1(2005) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBD2835LT1 Datasheet PDF : 4 Pages
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MMBD2835LT1,
MMBD2836LT1
Monolithic Dual Switching
Diodes
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
MMBD2835LT1 VR
MMBD2836LT1
35
Vdc
75
Forward Current
THERMAL CHARACTERISTICS
IF
100
mAdc
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
Junction and Storage Temperature
TJ, Tstg
417
−55 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
SOT− 23 (TO −236AB)
CASE 318 −08
STYLE 12
MARKING DIAGRAM
xxx M G
G
1
xxx = Specific Device Code
A3X = MMBD2835LT1
A2X = MMBD2836LT1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
ORDERING INFORMATION
Device
Package
Shipping†
MMBD2835LT1 SOT−23 3000 / Tape & Reel
MMBD2835LT1G
MMBD2836LT1
SOT−23 3000 / Tape & Reel
(Pb−Free)
SOT−23 3000 / Tape & Reel
MMBD2836LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMBD2835LT1/D
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