MJE13005DG-TA3-T 데이터 시트보기 (PDF) - Unisonic Technologies
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MJE13005DG-TA3-T Datasheet PDF : 3 Pages
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MJE13005D
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector- Emitter Voltage (VBE =0)
VCES
700
V
Collector-Emitter Voltage (IB =0)
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
Pulse
ICP
4
A
8
A
Base Current
DC
IB
Pulse
IBP
2
A
4
A
Power Dissipation
PD
75
W
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
SYMBOL
θJA
θJC
RATING
62.5
1.67
UNIT
°C/W
°C/W
PARAMETER
Collector-Emitter Breakdown Voltage
Collector -Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
Collect Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Resistive Load
Fall Time
Storage Time
Current Gain Bandwidth Product
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE
VBE(SAT)
tF
tS
fT
TEST CONDITIONS
IC=10mA, IB=0
IC=1mA, IB=0
IE =1mA, IC=0
VCB=700V, IE=0
VCE=400V,IB=0
VEB=9V, IC=0
VCE =5V, IC=500mA
VCE =5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, TC=100°C
IC=2A, IB=0.5A
VCC=24 V, IC=2A, IB1=-IB2=0.4A
VCE=10V, IC=0.5A
MIN TYP MAX UNIT
400
V
700
V
9
V
100 μA
50 μA
10 μA
8
50
5
0.5
0.6
V
1
1
1.6 V
0.7 μs
4 μs
4
MHZ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-379.b
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